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OM6005SC OM6007SC OM6105SC OM6107SC OM6006SC OM6008SC OM6106SC OM6108SC
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection
FEATURES
* * * * * * Isolated Hermetic Metal Package Bi-Lateral Zener Gate Protection (Optional) Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener clamps in the OM6105SC series.
MAXIMUM RATINGS
PART NUMBER OM6005SC/OM6105SC OM6006SC/OM6106SC OM6007SC/OM6107SC OM6008SC/OM6108SC
Note:
VDS 100 V 200 V 400 V 500 V
RDS(on) .065 .095 0.3 0.4
ID 35 A 30 A 15 A 13 A
3.1
OM6105SC thru OM6108SC is supplied with zener gate protection. OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS OM6005SC - 6008SC 1 - DRAIN WITH ZENER CLAMPS OM6105SC - 6108SC 1 - DRAIN
3 - GATE 3 - GATE ZENERS
2 - SOURCE
2 - SOURCE
4 11 R5 Supersedes 1 07 R4
3.1 - 75
3.1
OM6005SC - OM6108SC
ELECTRICAL CHARACTERISTICS:
Parameter BVDSS VGS(th) IGSS IGSS IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage (OM6105) Gate-Body Leakage (OM6005) Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2
(TC = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter BVDSS VGS(th) IGSS IGSS IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage (OM6106) Gate-Body Leakage (OM6006) Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2
(TC = 25C unless otherwise noted)
STATIC P/N OM6105SC/OM6005SC (100V)
Min. Typ. Max. Units Test Conditions 100 2.0 4.0 500 100 0.25 1.0 V V nA nA mA mA A 1.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 12.8 V VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C
STATIC P/N OM6106SC/OM6006SC (200V)
Min. Typ. Max. Units Test Conditions 200 2.0 4.0 500 100 0.25 1.0 V V nA nA mA mA A 1.36 1.52 .085 .095 0.14 0.17 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 12.8 V VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C
0.55 0.65 .09 0.11
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
9.0
10 2700 1300 470 28 45 100 50
S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
10.0 12.5 2400 600 250 25 60 85 38
S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
- 30 - 120 -2
TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 76
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
Parameter BVDSS VGS(th) IGSS IGSS IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage (OM6107) Gate-Body Leakage (OM6007) Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 Current1 15 2.0 0.25 0.1 0.2
(TC = 25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter BVDSS VGS(th) IGSS IGSS IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage (OM6108) Gate-Body Leakage (OM6008) Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 Current1 13 2.1 0.3 0.1 0.2
(TC = 25C unless otherwise noted)
STATIC P/N OM6107SC/OM6007SC (400V)
Min. Typ. Max. Units Test Conditions 400 2.0 4.0 500 100 0.25 1.0 V V nA nA mA mA A 2.4 0.3 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 12.8 V VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A VGS = 10 V, ID = 8.0 A, TC = 125 C
STATIC P/N OM6108SC/OM6008SC (500V)
Min. Typ. Max. Units Test Conditions 500 2.0 4.0 500 100 0.25 1.0 V V nA nA mA mA A 2.8 0.4 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 12.8 V VGS = 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125 C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A, TC = 125 C
Static Drain-Source On-State
Static Drain-Source On-State
0.50 0.60
0.66 0.88
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
6.0
9.6 2900 450 150 30 40 80 30
S(W ) VDS 2 VDS(on), ID = 8.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID @ 8.0 A Rg =5.0 W , VGS =10V
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
5.0
7.2 2600 280 40 30 46 75 31
S(W ) VDS 2 VDS(on), ID = 7.0 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 210 V, ID @ 7.0 A Rg = 5.0 W , VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 600 - 15 - 60 - 1.6 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
- 13 - 52 - 1.4
TC = 25 C, IS = -15 A, VGS = 0 TJ = 100 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 77
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
OM6005SC - OM6108SC
S
TC = 25 C, IS = -13 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
3.1
OM6005SC - OM6108SC ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Parameter VDS VDGR ID @ TC = 25C ID @ TC = 100C ID PD @ TC = 25C PD @ TC = 100C Junction To Case Junction To Ambient TJ Tstg Lead Temperature Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current2 Continuous Drain Current2 Pulsed Drain Current1 Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor1 Linear Derating Factor Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 300 -55 to 150 300 -55 to 150 300 C C OM6005SC OM6006SC OM6007SC OM6008SC Units OM6105SC OM6106SC OM6107SC OM6108SC 100 100 35 25 160 125 50 1.0 .025 200 200 30 19 120 125 50 1.0 .025 400 400 15 9 60 125 50 1.0 .025 500 500 13 8 52 125 50 1.0 .025 V V A A A W W W/C W/C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2%. 2 Package Pin Limitation = 35 Amps
THERMAL RESISTANCE (MAXIMUM) at TA = 25C
RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 40 C/W C/W Free Air Operation
POWER DERATING
MECHANICAL OUTLINE WITH PIN CONNECTION
.165 .155 .695 .685 .270 .240 .045 .035
.835 .815
3.1
.707 .697
.550 .530
1
.750 .500
2
3
.092 MAX.
Pin 1: Drain Pin 2: Source Pin 3: Gate
.005 .065 .055 .140 TYP.
.200 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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